DDTD114GC-7-F
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Diodes Incorporated DDTD114GC-7-F

Manufacturer No:
DDTD114GC-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DDTD114GC-7-F Datasheet
ECAD Model:
-
Description:
TRANS PREBIAS NPN 200MW SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):- 
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:56 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):500nA (ICBO)
Frequency - Transition:200 MHz
Power - Max:200 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
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In Stock

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Similar Products

Part Number DDTD114GC-7-F DDTD114GU-7-F   DDTD114TC-7-F   DDTD114EC-7-F  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete Obsolete Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V
Resistor - Base (R1) - - 10 kOhms 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms 10 kOhms - 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 50mA, 5V 56 @ 5mA, 5V 100 @ 50mA, 5V 56 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA 300mV @ 2.5mA, 50mA 300mV @ 2.5mA, 50mA 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA (ICBO) 500nA (ICBO) 500nA (ICBO) 500nA
Frequency - Transition 200 MHz 200 MHz 200 MHz 200 MHz
Power - Max 200 mW 200 mW 200 mW 200 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-323 SOT-23-3 SOT-23-3

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