Diodes Incorporated-DDTA123YE-7-F - Transistors - Bipolar (BJT) - Single, Pre-Biased Product Specifications and Latest Quotes

Part Number	DDTA123YE-7-F	DDTA123EE-7-F	DDTA123JE-7-F	DDTA123TE-7-F
Manufacturer	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Product Status	Active	Active	Active	Active
Transistor Type	PNP - Pre-Biased	PNP - Pre-Biased	PNP - Pre-Biased	PNP - Pre-Biased
Current - Collector (Ic) (Max)	100 mA	100 mA	100 mA	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V	50 V	50 V	50 V
Resistor - Base (R1)	2.2 kOhms	2.2 kOhms	2.2 kOhms	2.2 kOhms
Resistor - Emitter Base (R2)	10 kOhms	2.2 kOhms	47 kOhms	-
DC Current Gain (hFE) (Min) @ Ic, Vce	33 @ 10mA, 5V	20 @ 20mA, 5V	80 @ 10mA, 5V	100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA	300mV @ 500µA, 10mA	300mV @ 250µA, 5mA	300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)	500nA	500nA	500nA	500nA (ICBO)
Frequency - Transition	250 MHz	250 MHz	250 MHz	250 MHz
Power - Max	150 mW	150 mW	150 mW	150 mW
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	SOT-523	SOT-523	SOT-523	SOT-523
Supplier Device Package	SOT-523	SOT-523	SOT-523	SOT-523

Diodes Incorporated DDTA123YE-7-F

Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	50 V
Resistor - Base (R1):	2.2 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	33 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	250 MHz
Power - Max:	150 mW
Mounting Type:	Surface Mount
Package / Case:	SOT-523
Supplier Device Package:	SOT-523