Diodes Incorporated-DDA114TUQ-13-F - Transistors - Bipolar (BJT) - Arrays, Pre-Biased Product Specifications and Latest Quotes

Transistor Type:	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10kOhms
Resistor - Emitter Base (R2):	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 100µA, 1mA
Current - Collector Cutoff (Max):	500nA (ICBO)
Frequency - Transition:	250MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SOT-363

Diodes Incorporated DDA114TUQ-13-F