Diodes Incorporated-BSS8402DWQ-13 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	N and P-Channel Complementary
FET Feature:	Standard
Drain to Source Voltage (Vdss):	60V, 50V
Current - Continuous Drain (Id) @ 25°C:	115mA (Ta), 130mA (Ta)
Rds On (Max) @ Id, Vgs:	13.5Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id:	2.5V @ 250µA, 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	-
Input Capacitance (Ciss) (Max) @ Vds:	50pF @ 25V, 45pF @ 25V
Power - Max:	200mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SOT-363

Diodes Incorporated BSS8402DWQ-13