BSS138TC
  • Share:

Diodes Incorporated BSS138TC

Manufacturer No:
BSS138TC
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
BSS138TC Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 50V 200MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):300mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
124

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSS138TC BSS138TA  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta) 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 220mA, 10V 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 50 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 300mW (Ta) 300mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

IRFP054PBF
IRFP054PBF
Vishay Siliconix
MOSFET N-CH 60V 70A TO247-3
SI4190ADY-T1-GE3
SI4190ADY-T1-GE3
Vishay Siliconix
MOSFET N-CH 100V 18.4A 8SO
SI3433CDV-T1-GE3
SI3433CDV-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 6A 6TSOP
PJL9428_R2_00001
PJL9428_R2_00001
Panjit International Inc.
40V N-CHANNEL ENHANCEMENT MODE M
RJK6006DPP-A0#T2
RJK6006DPP-A0#T2
Renesas Electronics America Inc
MOSFET N-CH 600V 10A TO220FP
P3M06060K3
P3M06060K3
PN Junction Semiconductor
SICFET N-CH 650V 48A TO247-3
PSMN050-80PS,127
PSMN050-80PS,127
NXP USA Inc.
MOSFET N-CH 80V 22A TO220AB
IRF3805
IRF3805
Infineon Technologies
MOSFET N-CH 55V 75A TO220AB
IRL2203NLPBF
IRL2203NLPBF
Infineon Technologies
MOSFET N-CH 30V 116A TO262
AOWF2606
AOWF2606
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 60V 13A/51A TO262F
IPA50R650CEXKSA2
IPA50R650CEXKSA2
Infineon Technologies
MOSFET N-CH 500V 4.6A TO220
AO4407L
AO4407L
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SO

Related Product By Brand

FL2500219
FL2500219
Diodes Incorporated
CRYSTAL 25.0000MHZ 12PF SMD
ZC833BNTC
ZC833BNTC
Diodes Incorporated
DIODE VARIABLE CAP SOT23-3
MMSZ5240BS-7-F
MMSZ5240BS-7-F
Diodes Incorporated
DIODE ZENER 10V 200MW SOD323
ZTX1051A
ZTX1051A
Diodes Incorporated
TRANS NPN 40V 4A E-LINE
ZVNL110ASTZ
ZVNL110ASTZ
Diodes Incorporated
MOSFET N-CH 100V 320MA E-LINE
PI4IOE5V9555LEX
PI4IOE5V9555LEX
Diodes Incorporated
IC I/O EXPANDER 16B I2C 24TSSOP
PI3HDX412BDZBEX
PI3HDX412BDZBEX
Diodes Incorporated
IC INTERFACE SPECIALIZED 56TQFN
74LVC1G02W5-7
74LVC1G02W5-7
Diodes Incorporated
IC GATE NOR 1CH 2-INP SOT25
74LVCE1G02W5-7
74LVCE1G02W5-7
Diodes Incorporated
IC GATE NOR 1CH 2-INP SOT25
AP61302QZ6-7
AP61302QZ6-7
Diodes Incorporated
DCDC CONV LV BUCK SOT563 T&R 3K
AP2210N-2.8TRE1
AP2210N-2.8TRE1
Diodes Incorporated
IC REG LINEAR 2.8V 300MA SOT23-3
AP7344D-2518RH4-7
AP7344D-2518RH4-7
Diodes Incorporated
IC REG LIN 1.8V/2.5V X2DFN1612-8