BSS138TA
  • Share:

Diodes Incorporated BSS138TA

Manufacturer No:
BSS138TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
BSS138TA Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 50V 200MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):300mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.44
709

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSS138TA BSS138TC  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Not For New Designs Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta) 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 220mA, 10V 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 50 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 300mW (Ta) 300mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

SSM3K15AFS,LF
SSM3K15AFS,LF
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 100MA SSM
FDP036N10A
FDP036N10A
onsemi
MOSFET N-CH 100V 120A TO220-3
IXTQ460P2
IXTQ460P2
IXYS
MOSFET N-CH 500V 24A TO3P
MTD4N20E1
MTD4N20E1
onsemi
N-CHANNEL POWER MOSFET
TK20E60W,S1VX
TK20E60W,S1VX
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 20A TO220
IPI200N25N3GAKSA1
IPI200N25N3GAKSA1
Infineon Technologies
MOSFET N-CH 250V 64A TO262-3
BSZ22DN20NS3G
BSZ22DN20NS3G
Infineon Technologies
BSZ22DN20 - 12V-300V N-CHANNEL P
SPB10N10 G
SPB10N10 G
Infineon Technologies
MOSFET N-CH 100V 10.3A TO263-3
BS108G
BS108G
onsemi
MOSFET N-CH 200V 250MA TO92-3
IPL60R255P6AUMA1
IPL60R255P6AUMA1
Infineon Technologies
MOSFET N-CH 600V 15.9A 4VSON
RTL020P02FRATR
RTL020P02FRATR
Rohm Semiconductor
MOSFET P-CH 20V 2A TUMT6
R6524KNJTL
R6524KNJTL
Rohm Semiconductor
MOSFET N-CH 650V 24A LPTS

Related Product By Brand

GC0350001
GC0350001
Diodes Incorporated
CRYSTAL METAL CAN 49S/SMD T&R 1K
F94800031
F94800031
Diodes Incorporated
CRYSTAL 48.0000MHZ 12PF
NX51250001
NX51250001
Diodes Incorporated
CLOCK SAW OSCILLATOR SEAM5032 T&
FM0960001
FM0960001
Diodes Incorporated
XTAL OSC XO 9.6000MHZ CMOS SMD
SBL2040CT
SBL2040CT
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V TO220AB
B170-13-F
B170-13-F
Diodes Incorporated
DIODE SCHOTTKY 70V 1A SMA
DMT64M8LSS-13
DMT64M8LSS-13
Diodes Incorporated
MOSFET BVDSS: 41V~60V SO-8 T&R 2
PI90LV14LE
PI90LV14LE
Diodes Incorporated
IC CLK BUFFER 2:5 250MHZ 20TSSOP
PI6CXG06F62AFBEIE
PI6CXG06F62AFBEIE
Diodes Incorporated
IC FLEXOUT LOW JITTER CLK 48LQFP
AP3917CS7-13
AP3917CS7-13
Diodes Incorporated
IC OFFLINE SWITCH MULT TOP 7SO
ZSM380GTA
ZSM380GTA
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT223
AP7340D-33FS4-7
AP7340D-33FS4-7
Diodes Incorporated
IC REG LINEAR 3.3V 150MA 4DFN