BSS123ATA
  • Share:

Diodes Incorporated BSS123ATA

Manufacturer No:
BSS123ATA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
BSS123ATA Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 170MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:25 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
143

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSS123ATA BSS123TA   BSS123ATC  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 170mA (Ta) 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V 6Ohm @ 100mA, 10V 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 25 pF @ 25 V 20 pF @ 25 V 25 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 360mW (Ta) 360mW (Ta) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

IXTY01N100
IXTY01N100
IXYS
MOSFET N-CH 1000V 100MA TO252AA
HUF75639S3_NL
HUF75639S3_NL
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
IPB011N04NGATMA1
IPB011N04NGATMA1
Infineon Technologies
MOSFET N-CH 40V 180A TO263-7
DN1509N8-G
DN1509N8-G
Microchip Technology
MOSFET N-CH 90V 360MA TO243AA
BS107PSTZ
BS107PSTZ
Diodes Incorporated
MOSFET N-CH 200V 120MA E-LINE
TK33S10N1Z,LXHQ
TK33S10N1Z,LXHQ
Toshiba Semiconductor and Storage
MOSFET N-CH 100V 33A DPAK
IXTP26P10T
IXTP26P10T
IXYS
MOSFET P-CH 100V 26A TO220AB
SPD07N60S5T
SPD07N60S5T
Infineon Technologies
MOSFET N-CH 600V 7.3A TO252-3
IRFS3306PBF
IRFS3306PBF
Infineon Technologies
MOSFET N-CH 60V 120A D2PAK
IXTN79N20
IXTN79N20
IXYS
MOSFET N-CH 200V 85A SOT227B
NDD03N50Z-1G
NDD03N50Z-1G
onsemi
MOSFET N-CH 500V 2.6A IPAK
RQ1E050RPTR
RQ1E050RPTR
Rohm Semiconductor
MOSFET P-CH 30V 5A TSMT8

Related Product By Brand

TB0900H-13-F
TB0900H-13-F
Diodes Incorporated
THYRISTOR 75V 400A DO214AA
GB2500031
GB2500031
Diodes Incorporated
CRYSTAL METAL CAN DIP49S T&R 1K
PBPC1005
PBPC1005
Diodes Incorporated
BRIDGE RECT 1P 600V 8A PBPC-8
BAV99TA
BAV99TA
Diodes Incorporated
DIODE ARRAY GP 75V 300MA SOT23-3
UF1001-T
UF1001-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
BAT42WS-7-F
BAT42WS-7-F
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD323
DSR15V600-G
DSR15V600-G
Diodes Incorporated
DIODE SMD
MMBZ5252BW-7-F
MMBZ5252BW-7-F
Diodes Incorporated
DIODE ZENER 24V 200MW SOT323
ZVP3306FTC
ZVP3306FTC
Diodes Incorporated
MOSFET P-CH 60V 90MA SOT23-3
PI6C4911504-01LIE
PI6C4911504-01LIE
Diodes Incorporated
IC CLOCK BUFFER 2:4 20TSSOP
AP7315Q-25W5-7
AP7315Q-25W5-7
Diodes Incorporated
IC REG LINEAR 2.5V 150MA SOT25
AP7315-23FS4-7B
AP7315-23FS4-7B
Diodes Incorporated
IC REG LINEAR 2.3V 150MA 4DFN