BSN20-7
  • Share:

Diodes Incorporated BSN20-7

Manufacturer No:
BSN20-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
BSN20-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 50V 500MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.8Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):600mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.36
1,450

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSN20-7 BSN20Q-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta) 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.8Ohm @ 220mA, 10V 1.8Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.8 nC @ 10 V 0.8 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V 40 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 600mW (Ta) 600mW (Ta), 920mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

MCH6424-TL-E
MCH6424-TL-E
Sanyo
N-CHANNEL SILICON MOSFET
2N7002K
2N7002K
MDD
MOSFET SOT-23 N Channel 60V
FQI8N60CTU
FQI8N60CTU
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 7
FCPF099N65S3
FCPF099N65S3
onsemi
MOSFET N-CH 650V 30A TO220F
AO4354
AO4354
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 23A 8SOIC
STL66N3LLH5
STL66N3LLH5
STMicroelectronics
MOSFET N-CH 30V 80A POWERFLAT
NTGS3446T1
NTGS3446T1
onsemi
MOSFET N-CH 20V 2.5A 6TSOP
IPDH5N03LA G
IPDH5N03LA G
Infineon Technologies
MOSFET N-CH 25V 50A TO252-3
FDD45AN06LA0_F085
FDD45AN06LA0_F085
onsemi
MOSFET N-CH 60V 5.2A/25A TO252AA
FK3506010L
FK3506010L
Panasonic Electronic Components
MOSFET N-CH 60V 100MA SMINI3
NVC6S5A354PLZT1G
NVC6S5A354PLZT1G
onsemi
MOSFET P-CH 60V 4A 6CPH
DMP2004TK-7-79
DMP2004TK-7-79
Diodes Incorporated
DIODE

Related Product By Brand

D3V3F4U10LP-7
D3V3F4U10LP-7
Diodes Incorporated
TVS DIODE 3.3VWM 5VC U-DFN2510
FD0180010
FD0180010
Diodes Incorporated
XTAL OSC XO 1.8432MHZ CMOS SMD
ES2AA-13-F
ES2AA-13-F
Diodes Incorporated
DIODE GEN PURP 50V 2A SMA
SBRT3U40P1Q-7
SBRT3U40P1Q-7
Diodes Incorporated
DIODE SBR 40V 3A POWERDI123
S1MSWF-7
S1MSWF-7
Diodes Incorporated
DIODE GEN PURP 1KV 1A SOD123F
MMBZ5242B-7-F
MMBZ5242B-7-F
Diodes Incorporated
DIODE ZENER 12V 350MW SOT23-3
ZXTP25100CZTA
ZXTP25100CZTA
Diodes Incorporated
TRANS PNP 100V 1A SOT89-3
ZXTP4003GTA
ZXTP4003GTA
Diodes Incorporated
TRANS PNP 100V 1A SOT89-3
PI3EQX8908A1ZFEX
PI3EQX8908A1ZFEX
Diodes Incorporated
IC REDRIVER PCIE 8CH 54TQFN
AP9101CK6-AHTRG1
AP9101CK6-AHTRG1
Diodes Incorporated
IC BATT PROT LI-ION 1CELL SOT26
ZXTR2012Z-7
ZXTR2012Z-7
Diodes Incorporated
IC REG LINEAR 12V 47MA SOT89
AH1887-ZG-7
AH1887-ZG-7
Diodes Incorporated
MAGNETIC SWITCH OMNIPOLAR SOT553