Diodes Incorporated-BS250PSTZ - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	45 V
Current - Continuous Drain (Id) @ 25°C:	230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	14Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:	3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	60 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	700mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	E-Line (TO-92 compatible)
Package / Case:	E-Line-3

Diodes Incorporated BS250PSTZ