BS250FTC
  • Share:

Diodes Incorporated BS250FTC

Manufacturer No:
BS250FTC
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
BS250FTC Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 45V 90MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):45 V
Current - Continuous Drain (Id) @ 25°C:90mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:14Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:25 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):330mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
303

Please send RFQ , we will respond immediately.

Similar Products

Part Number BS250FTC BS250FTA  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 45 V 45 V
Current - Continuous Drain (Id) @ 25°C 90mA (Ta) 90mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 14Ohm @ 200mA, 10V 14Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 25 pF @ 10 V 25 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 330mW (Ta) 330mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

AUIRFZ24NSTRL
AUIRFZ24NSTRL
Infineon Technologies
MOSFET N-CH 55V 17A DPAK
IPB025N08N3GATMA1
IPB025N08N3GATMA1
Infineon Technologies
MOSFET N-CH 80V 120A D2PAK
IPD50P04P4L11ATMA1
IPD50P04P4L11ATMA1
Infineon Technologies
MOSFET P-CH 40V 50A TO252-3
FDB86363-F085
FDB86363-F085
onsemi
MOSFET N-CH 80V 110A D2PAK
STP33N60M2
STP33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A TO220
DMN6022SSS-13
DMN6022SSS-13
Diodes Incorporated
MOSFET N-CH 6.9A 8SO
TK14G65W5,RQ
TK14G65W5,RQ
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 13.7A D2PAK
FQA8N90C-F109
FQA8N90C-F109
onsemi
MOSFET N-CH 900V 8A TO3PN
IRLD014
IRLD014
Vishay Siliconix
MOSFET N-CH 60V 1.7A 4DIP
NTR4501NT3
NTR4501NT3
onsemi
MOSFET N-CH 20V 3.2A SOT23-3
IXFT15N100Q
IXFT15N100Q
IXYS
MOSFET N-CH 1000V 15A TO268
RS3E095BNGZETB
RS3E095BNGZETB
Rohm Semiconductor
MOSFET N-CHANNEL 30V 9.5A 8SOP

Related Product By Brand

FNETHE025
FNETHE025
Diodes Incorporated
XTAL OSC XO 25.0000MHZ CMOS SMD
FK2500067
FK2500067
Diodes Incorporated
XTAL OSC XO 25.0000MHZ LVCMOS
FDC500037
FDC500037
Diodes Incorporated
XTAL OSC XO 125.003125MHZ CMOS
SBRT20M80SP5-13D
SBRT20M80SP5-13D
Diodes Incorporated
DIODE SBR 80V 20A POWERDI5
B350CE-13
B350CE-13
Diodes Incorporated
DIODE SCHOTTKY 50V 3A SMC
DXT2010P5-13
DXT2010P5-13
Diodes Incorporated
TRANS NPN 60V 6A POWERDI5
FMMTA92QTA
FMMTA92QTA
Diodes Incorporated
SS HI VOLTAGE TRANSISTOR SOT23 T
DSM80100M-7
DSM80100M-7
Diodes Incorporated
TRANS PNP 80V 0.5A SOT26
PI6C185-02BQE
PI6C185-02BQE
Diodes Incorporated
IC CLK BUFFER 1:7 140MHZ 16QSOP
ZXCT1082QE5TA
ZXCT1082QE5TA
Diodes Incorporated
IC CURRENT MONITOR SOT25
AP1186K5-50L-13
AP1186K5-50L-13
Diodes Incorporated
IC REG LINEAR 5V 1.5A TO263-5
AP1122YL-13
AP1122YL-13
Diodes Incorporated
IC REG LINEAR 1.2V 1A SOT89-3