BS170PSTOB
  • Share:

Diodes Incorporated BS170PSTOB

Manufacturer No:
BS170PSTOB
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
BS170PSTOB Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 270MA E-LINE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):625mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:E-Line (TO-92 compatible)
Package / Case:E-Line-3
0 Remaining View Similar

In Stock

-
504

Please send RFQ , we will respond immediately.

Similar Products

Part Number BS170PSTOB BS170PSTOA  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 270mA (Ta) 270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 200mA, 10V 5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 10 V 60 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 625mW (Ta) 625mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package E-Line (TO-92 compatible) E-Line (TO-92 compatible)
Package / Case E-Line-3 E-Line-3

Related Product By Categories

SSM3J09FU,LF
SSM3J09FU,LF
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 200MA USM
SFS9Z14
SFS9Z14
Fairchild Semiconductor
P-CHANNEL POWER MOSFET
NDB4060
NDB4060
Fairchild Semiconductor
MOSFET N-CH 60V 15A D2PAK
2SK1432
2SK1432
onsemi
N-CHANNEL POWER MOSFET
IMZA65R057M1HXKSA1
IMZA65R057M1HXKSA1
Infineon Technologies
SILICON CARBIDE MOSFET, PG-TO247
SIA429DJT-T1-GE3
SIA429DJT-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 12A PPAK SC70-6
STH240N75F3-6
STH240N75F3-6
STMicroelectronics
MOSFET N-CH 75V 180A H2PAK-6
FCP099N65S3
FCP099N65S3
onsemi
MOSFET N-CH 650V 30A TO220-3
FDBL86563-F085
FDBL86563-F085
onsemi
MOSFET N-CH 60V 240A 8HPSOF
SUM110N04-2M3L-E3
SUM110N04-2M3L-E3
Vishay Siliconix
MOSFET N-CH 40V 110A TO263
NTD5806NT4G
NTD5806NT4G
onsemi
MOSFET N-CH 40V 33A DPAK
AON6248
AON6248
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 60V 17.5A/53A 8DFN

Related Product By Brand

DFLT26A-7
DFLT26A-7
Diodes Incorporated
TVS DIODE 26VWM 42.1VC PWRDI 123
B140HB-13-F
B140HB-13-F
Diodes Incorporated
DIODE SCHOTTKY 40V 1A SMB
RS1JDF-13
RS1JDF-13
Diodes Incorporated
DIODE GEN PURP 600V 1A DFLAT
PR1007GL-T
PR1007GL-T
Diodes Incorporated
DIODE GEN PURP 1KV 1A DO41
BZT52C33-7-F
BZT52C33-7-F
Diodes Incorporated
DIODE ZENER 33V 500MW SOD123
ADTC143TUAQ-7
ADTC143TUAQ-7
Diodes Incorporated
PREBIASTRANSISTORSOT323
DDTD133HC-7-F
DDTD133HC-7-F
Diodes Incorporated
TRANS PREBIAS NPN 200MW SOT23-3
ZVN4206NTA
ZVN4206NTA
Diodes Incorporated
MOSFET 2N-CH 60V SOT-223-8
74LVC2G126HD4-7
74LVC2G126HD4-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V 8DFN
74AHC08T14-13
74AHC08T14-13
Diodes Incorporated
IC GATE AND 4CH 2-INP 14TSSOP
PT7M6714CUE
PT7M6714CUE
Diodes Incorporated
IC SUPERVISOR 4 CHANNEL 10MSOP
AZ1085CD-1.8TRG1
AZ1085CD-1.8TRG1
Diodes Incorporated
IC REG LINEAR 1.8V 3A TO252-2