BS170PSTOB
  • Share:

Diodes Incorporated BS170PSTOB

Manufacturer No:
BS170PSTOB
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
BS170PSTOB Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 270MA E-LINE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):625mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:E-Line (TO-92 compatible)
Package / Case:E-Line-3
0 Remaining View Similar

In Stock

-
504

Please send RFQ , we will respond immediately.

Similar Products

Part Number BS170PSTOB BS170PSTOA  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 270mA (Ta) 270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 200mA, 10V 5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 10 V 60 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 625mW (Ta) 625mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package E-Line (TO-92 compatible) E-Line (TO-92 compatible)
Package / Case E-Line-3 E-Line-3

Related Product By Categories

IPDD60R055CFD7XTMA1
IPDD60R055CFD7XTMA1
Infineon Technologies
MOSFET N-CH 600V 52A HDSOP-10
IPB50N10S3L16ATMA1
IPB50N10S3L16ATMA1
Infineon Technologies
MOSFET N-CH 100V 50A TO263-3
IPI076N15N5AKSA1
IPI076N15N5AKSA1
Infineon Technologies
MV POWER MOS
STD1HN60K3
STD1HN60K3
STMicroelectronics
MOSFET N-CH 600V 1.2A DPAK
RM135N100T2
RM135N100T2
Rectron USA
MOSFET N-CH 100V 135A TO220-3
NTTYS009N08HLTWG
NTTYS009N08HLTWG
onsemi
T8 80V N-CH LL IN LFPAK33 PACKAG
NVMFS6H824NWFT1G
NVMFS6H824NWFT1G
onsemi
MOSFET N-CH 80V 19A/103A 5DFN
NVMFS4C05NWFT1G
NVMFS4C05NWFT1G
onsemi
MOSFET N-CH 30V 24.7A/116A 5DFN
UJ4SC075009B7S
UJ4SC075009B7S
UnitedSiC
750V/9MOHM, N-OFF SIC STACK CASC
SI4866BDY-T1-E3
SI4866BDY-T1-E3
Vishay Siliconix
MOSFET N-CH 12V 21.5A 8SO
BSN254A,126
BSN254A,126
NXP USA Inc.
MOSFET N-CH 250V 310MA TO92-3
BUK754R3-40B,127
BUK754R3-40B,127
NXP USA Inc.
MOSFET N-CH 40V 75A TO220AB

Related Product By Brand

FL0800004Q
FL0800004Q
Diodes Incorporated
CRYSTAL 8.0000MHZ 12PF SMD
FK5120002
FK5120002
Diodes Incorporated
CLOCK SAW OSCILLATOR SEAM3225 T&
FN1200038
FN1200038
Diodes Incorporated
XTAL OSC XO 12.0000MHZ CMOS SMD
JT3540004P
JT3540004P
Diodes Incorporated
TEMP COMP XO SEAM3225 T&R 3K
DDZ9V1B-7
DDZ9V1B-7
Diodes Incorporated
DIODE ZENER 8.79V 500MW SOD123
ZX5T1951GTA
ZX5T1951GTA
Diodes Incorporated
TRANS PNP 60V 6A SOT223-3
DDTC144WUA-7-F
DDTC144WUA-7-F
Diodes Incorporated
TRANS PREBIAS NPN 200MW SOT323
DMC2700UDMQ-7
DMC2700UDMQ-7
Diodes Incorporated
MOSFET BVDSS: 8V24V SOT26 T&R 3
PI3HDMI336FBE
PI3HDMI336FBE
Diodes Incorporated
IC INTERFACE SPECIALIZED 64LQFP
PI74ST1G126CEX
PI74ST1G126CEX
Diodes Incorporated
IC BUF NON-INVERT 3.6V SC70-5
74AUP1G08FW4-7
74AUP1G08FW4-7
Diodes Incorporated
IC GATE AND 1CH 2-INP DFN1010-6
AP2126K-ADJTRG1
AP2126K-ADJTRG1
Diodes Incorporated
IC REG LIN POS ADJ 300MA SOT23-5