BS170P
  • Share:

Diodes Incorporated BS170P

Manufacturer No:
BS170P
Manufacturer:
Diodes Incorporated
Package:
Bulk
Datasheet:
BS170P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 270MA TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):625mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-92
Package / Case:TO-226-3, TO-92-3 (TO-226AA)
0 Remaining View Similar

In Stock

$0.85
545

Please send RFQ , we will respond immediately.

Similar Products

Part Number BS170P BS170   BS170G  
Manufacturer Diodes Incorporated onsemi onsemi
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 270mA (Ta) 500mA (Ta) 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 200mA, 10V 5Ohm @ 200mA, 10V 5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA 3V @ 1mA 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 10 V 40 pF @ 10 V 60 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 625mW (Ta) 830mW (Ta) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-92 TO-92-3 TO-92 (TO-226)
Package / Case TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 Long Body

Related Product By Categories

ISL9N308AS3ST
ISL9N308AS3ST
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
FQPF6N60
FQPF6N60
Fairchild Semiconductor
MOSFET N-CH 600V 3.6A TO220F
SQM120N06-3M5L_GE3
SQM120N06-3M5L_GE3
Vishay Siliconix
MOSFET N-CH 60V 120A TO263
PJW7N04-AU_R2_000A1
PJW7N04-AU_R2_000A1
Panjit International Inc.
40V N-CHANNEL ENHANCEMENT MODE M
AOWF7S60
AOWF7S60
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 7A TO262F
BUK7C08-55AITE,118
BUK7C08-55AITE,118
Nexperia USA Inc.
MOSFET N-CH 55V 75A D2PAK
IRL2505STRL
IRL2505STRL
Infineon Technologies
MOSFET N-CH 55V 104A D2PAK
ZVN4210ASTOB
ZVN4210ASTOB
Diodes Incorporated
MOSFET N-CH 100V 450MA E-LINE
SI7758DP-T1-GE3
SI7758DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 60A PPAK SO-8
SI2335DS-T1-GE3
SI2335DS-T1-GE3
Vishay Siliconix
MOSFET P-CH 12V 3.2A SOT23-3
SI4880DY-T1-E3
SI4880DY-T1-E3
Vishay Siliconix
MOSFET N-CH 30V 13A 8-SOIC
AO4448L
AO4448L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 80V 10A 8SO

Related Product By Brand

GB0360007
GB0360007
Diodes Incorporated
CRYSTAL METAL CAN DIP49S T&R 1K
F91100015
F91100015
Diodes Incorporated
IC REGULATOR
NX71C50001
NX71C50001
Diodes Incorporated
XTAL OSC XO 125.0000MHZ LVCMOS
UX31F62001
UX31F62001
Diodes Incorporated
XTAL OSC XO 156.2500MHZ CMOS
MBR1040CT
MBR1040CT
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V TO220AB
B130L-13
B130L-13
Diodes Incorporated
DIODE SCHOTTKY 30V 1A SMA
FCX458TA
FCX458TA
Diodes Incorporated
TRANS NPN 400V 0.225A SOT89-3
DMN32D2LDF-7
DMN32D2LDF-7
Diodes Incorporated
MOSFET 2N-CH 30V 0.4A SOT353
PI3A3160ZEEX
PI3A3160ZEEX
Diodes Incorporated
IC SWITCH DUAL SPDT 12TDFN
PI5C3305UEX
PI5C3305UEX
Diodes Incorporated
IC BUS SWITCH 1 X 1:1 8MSOP
AL1692L-30BS7-13
AL1692L-30BS7-13
Diodes Incorporated
IC LED DRIVER OFFL TRIAC 3A 7SO
AP2204K-1.8TRG1
AP2204K-1.8TRG1
Diodes Incorporated
IC REG LINEAR 1.8V 150MA SOT23-5