BS170P
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Diodes Incorporated BS170P

Manufacturer No:
BS170P
Manufacturer:
Diodes Incorporated
Package:
Bulk
Datasheet:
BS170P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 270MA TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):625mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-92
Package / Case:TO-226-3, TO-92-3 (TO-226AA)
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Similar Products

Part Number BS170P BS170   BS170G  
Manufacturer Diodes Incorporated onsemi onsemi
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 270mA (Ta) 500mA (Ta) 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 200mA, 10V 5Ohm @ 200mA, 10V 5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA 3V @ 1mA 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 10 V 40 pF @ 10 V 60 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 625mW (Ta) 830mW (Ta) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-92 TO-92-3 TO-92 (TO-226)
Package / Case TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 Long Body

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