BS107PSTOB
  • Share:

Diodes Incorporated BS107PSTOB

Manufacturer No:
BS107PSTOB
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
BS107PSTOB Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 120MA E-LINE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.6V, 5V
Rds On (Max) @ Id, Vgs:30Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:E-Line (TO-92 compatible)
Package / Case:E-Line-3
0 Remaining View Similar

In Stock

-
412

Please send RFQ , we will respond immediately.

Similar Products

Part Number BS107PSTOB BS107PSTOA  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 120mA (Ta) 120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.6V, 5V 2.6V, 5V
Rds On (Max) @ Id, Vgs 30Ohm @ 100mA, 5V 30Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - -
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package E-Line (TO-92 compatible) E-Line (TO-92 compatible)
Package / Case E-Line-3 E-Line-3

Related Product By Categories

BSP230,135
BSP230,135
Nexperia USA Inc.
MOSFET P-CH 300V 210MA SOT223
AOK66613
AOK66613
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 60V 58.5A/120A TO247
STB11N52K3
STB11N52K3
STMicroelectronics
MOSFET N-CH 525V 10A D2PAK
SPW15N60C3FKSA1
SPW15N60C3FKSA1
Infineon Technologies
MOSFET N-CH 650V 15A TO247-3
RM30P55LD
RM30P55LD
Rectron USA
MOSFET P-CHANNEL 55V 30A TO252-2
IPLK80R1K2P7ATMA1
IPLK80R1K2P7ATMA1
Infineon Technologies
MOSFET 800V TDSON-8
DMP2170U-7
DMP2170U-7
Diodes Incorporated
MOSFET P-CH 20V 3.1A SOT23
IRF7470TR
IRF7470TR
Infineon Technologies
MOSFET N-CH 40V 10A 8SO
RFD8P05
RFD8P05
onsemi
MOSFET P-CH 50V 8A I-PAK
IRFR13N20DTRRP
IRFR13N20DTRRP
Infineon Technologies
MOSFET N-CH 200V 13A DPAK
FDC645N_F095
FDC645N_F095
onsemi
MOSFET N-CH 30V 5.5A SUPERSOT6
AUIRF7416QTR
AUIRF7416QTR
Infineon Technologies
MOSFET P-CH 30V 10A 8SO

Related Product By Brand

D3V3M1U2S9-7
D3V3M1U2S9-7
Diodes Incorporated
TVS DIODE 3.3VWM 10VC SOD923
FL4000157Z
FL4000157Z
Diodes Incorporated
CRYSTAL 40.0000MHZ 15PF SMD
FN2500160A
FN2500160A
Diodes Incorporated
CLOCK SAW OSCILLATOR SEAM7050 T&
KX3211E0032.768000
KX3211E0032.768000
Diodes Incorporated
XTAL OSC XO 32.7680 KHZ CMOS SMD
DL4935-13
DL4935-13
Diodes Incorporated
DIODE GEN PURP 200V 1A MELF
BZX84C4V3-7-F-79
BZX84C4V3-7-F-79
Diodes Incorporated
DIODE ZENER 4.3V 300MW SOT23
DMT2004UFDF-7
DMT2004UFDF-7
Diodes Incorporated
MOSFET N-CH 24V 14.1A 6UDFN
PI6CB184Q2ZHQEX
PI6CB184Q2ZHQEX
Diodes Incorporated
CLOCK BUFFER W-QFN5050-32
APX810S05-26SA-7
APX810S05-26SA-7
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT23
APX803L40-46SR-7
APX803L40-46SR-7
Diodes Incorporated
RESET GENERATOR SOT23 T&R 3K
APX803L-33W5-7
APX803L-33W5-7
Diodes Incorporated
RESET GENERATOR SOT25 T&R 3K
PT7M6248CLTA3EX
PT7M6248CLTA3EX
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT23-3