Diodes Incorporated-BCX5610TA - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BCX5610TA	BCX5616TA	BCX5310TA	BCX5410TA	BCX5510TA
Manufacturer	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Product Status	Active	Active	Active	Active	Active
Transistor Type	NPN	NPN	PNP	NPN	NPN
Current - Collector (Ic) (Max)	1 A	1 A	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	80 V	45 V	60 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	63 @ 150mA, 2V	100 @ 150mA, 2V	63 @ 150mA, 2V	63 @ 150mA, 2V	63 @ 150mA, 2V
Power - Max	1 W	1 W	1 W	1 W	1 W
Frequency - Transition	150MHz	150MHz	150MHz	150MHz	150MHz
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-243AA	TO-243AA	TO-243AA	TO-243AA	TO-243AA
Supplier Device Package	SOT-89-3	SOT-89-3	SOT-89-3	SOT-89-3	SOT-89-3

Diodes Incorporated BCX5610TA

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	63 @ 150mA, 2V
Power - Max:	1 W
Frequency - Transition:	150MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	SOT-89-3