Diodes Incorporated-BCP5616TQTA - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BCP5616TQTA	BCP5616TTA	BCP5616TQTC	BCP5616QTA
Manufacturer	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Product Status	Active	Active	Active	Active
Transistor Type	NPN	NPN	NPN	NPN
Current - Collector (Ic) (Max)	1 A	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	80 V	80 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 2V	100 @ 150mA, 2V	100 @ 150mA, 2V	100 @ 150mA, 2V
Power - Max	2.5 W	2.5 W	2.5 W	2 W
Frequency - Transition	150MHz	150MHz	150MHz	150MHz
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA
Supplier Device Package	SOT-223-3	SOT-223-3	SOT-223-3	SOT-223-3

Diodes Incorporated BCP5616TQTA

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 2V
Power - Max:	2.5 W
Frequency - Transition:	150MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223-3