BCP5610TA
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Diodes Incorporated BCP5610TA

Manufacturer No:
BCP5610TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
BCP5610TA Datasheet
ECAD Model:
-
Description:
TRANS NPN 80V 1A SOT223-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:150MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223-3
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$0.42
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Similar Products

Part Number BCP5610TA BCP5616TA   BCP5310TA   BCP5410TA   BCP5510TA   BCP5610QTA  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Active Active
Transistor Type NPN NPN PNP NPN - NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A - 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 45 V - 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA - 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) - 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V - 63 @ 150mA, 2V
Power - Max 2 W 2 W 2 W 2 W - 2 W
Frequency - Transition 150MHz 150MHz 150MHz 150MHz - 150MHz
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) - -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount - Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA - TO-261-4, TO-261AA
Supplier Device Package SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3 - SOT-223-3

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