Diodes Incorporated-BCP5610QTC - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BCP5610QTC	BCP5616QTC	BCP5610QTA
Manufacturer	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Product Status	Active	Active	Active
Transistor Type	NPN	NPN	NPN
Current - Collector (Ic) (Max)	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	80 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	63 @ 150mA, 2V	100 @ 150mA, 2V	63 @ 150mA, 2V
Power - Max	2 W	2 W	2 W
Frequency - Transition	150MHz	150MHz	150MHz
Operating Temperature	-65°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA
Supplier Device Package	SOT-223-3	SOT-223-3	SOT-223-3

Diodes Incorporated BCP5610QTC

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	63 @ 150mA, 2V
Power - Max:	2 W
Frequency - Transition:	150MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223-3