BCP5516TA
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Diodes Incorporated BCP5516TA

Manufacturer No:
BCP5516TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
BCP5516TA Datasheet
ECAD Model:
-
Description:
TRANS NPN 60V 1A SOT223-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:150MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223-3
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$0.43
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Similar Products

Part Number BCP5516TA BCP5616TA   BCP5216TA   BCP5316TA   BCP5416TA   BCP5510TA  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Active Active
Transistor Type NPN NPN PNP PNP NPN -
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A -
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 60 V 80 V 45 V -
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA -
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V -
Power - Max 2 W 2 W 2 W 2 W 2 W -
Frequency - Transition 150MHz 150MHz 150MHz 150MHz 150MHz -
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount -
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA -
Supplier Device Package SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3 -

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