Diodes Incorporated-BC857BWQ-13-F - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	PNP
Current - Collector (Ic) (Max):	50 mA
Voltage - Collector Emitter Breakdown (Max):	120 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	180 @ 2mA, 6V
Power - Max:	200 mW
Frequency - Transition:	140MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	UMT3

Diodes Incorporated BC857BWQ-13-F