BAS116Q-13-F
  • Share:

Diodes Incorporated BAS116Q-13-F

Manufacturer No:
BAS116Q-13-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
BAS116Q-13-F Datasheet
ECAD Model:
-
Description:
SWITCHING DIODE BVR <= 100V SOT2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):85 V
Current - Average Rectified (Io):215mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):3 µs
Current - Reverse Leakage @ Vr:5 nA @ 75 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$0.04
12,523

Please send RFQ , we will respond immediately.

Similar Products

Part Number BAS116Q-13-F BAS16Q-13-F  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 85 V 75 V
Current - Average Rectified (Io) 215mA (DC) 200mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Standard Recovery >500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 3 µs 4 ns
Current - Reverse Leakage @ Vr 5 nA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

PU1DLSH
PU1DLSH
Taiwan Semiconductor Corporation
25NS, 1A, 200V, ULTRA FAST RECOV
NXPSC10650Q
NXPSC10650Q
WeEn Semiconductors
DIODE SCHOTTKY 650V 10A TO220AC
HER104G
HER104G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 1A DO204AL
D711N60TXPSA1
D711N60TXPSA1
Infineon Technologies
DIODE GEN PURP 6KV 1070A
UG8FTHE3/45
UG8FTHE3/45
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 300V 8A TO220AC
CD1206-S01575
CD1206-S01575
Bourns Inc.
DIODE GEN PURP 100V 150MA 1206
GP10-4002HM3/54
GP10-4002HM3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO204AL
ES1AL MQG
ES1AL MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
SF3004PTHC0G
SF3004PTHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 30A TO247AD
HER151G
HER151G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1.5A 50V DO-15
BAS116HYT116
BAS116HYT116
Rohm Semiconductor
LOW-LEAKAGE, 80V, 215MA, SOT-23,
RB068L-60DDTE25
RB068L-60DDTE25
Rohm Semiconductor
DIODE SCHOTTKY 60V 2A PMDS

Related Product By Brand

MMBZ27VCLQ-7-F
MMBZ27VCLQ-7-F
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR PP
FY1600087M
FY1600087M
Diodes Incorporated
CRYSTAL SURFACE MOUNT
FN1200020
FN1200020
Diodes Incorporated
CLOCK SAW OSCILLATOR SEAM7050 T&
MBR2045CTF-G1
MBR2045CTF-G1
Diodes Incorporated
DIODE SCHOTTKY 45V 10A TO220AB
BZX84C2V7Q-7-F
BZX84C2V7Q-7-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 3K
PI6ULS5V9627AQEX
PI6ULS5V9627AQEX
Diodes Incorporated
IC REDRIVER 4 CHAN I2C 16QSOP
74LVC2G14FW4-7
74LVC2G14FW4-7
Diodes Incorporated
IC INVERTER 2CH 2-INP DFN1010-6
PI3B3257WE
PI3B3257WE
Diodes Incorporated
IC MUX/DEMUX 4 X 2:1 16SOIC
AP9101CK6-ACTRG1
AP9101CK6-ACTRG1
Diodes Incorporated
IC BATT PROT LI-ION 1CELL SOT26
AP2156SG-13
AP2156SG-13
Diodes Incorporated
IC PWR SWITCH P-CHANNEL 1:2 8SOP
APX810S05-44SR-7
APX810S05-44SR-7
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT23
AH3772-W-7
AH3772-W-7
Diodes Incorporated
MAGNETIC SWITCH LATCH SC59-3