B130-13-F
  • Share:

Diodes Incorporated B130-13-F

Manufacturer No:
B130-13-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
B130-13-F Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 30V 1A SMA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:500 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:500 µA @ 30 V
Capacitance @ Vr, F:110pF @ 4V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-214AC, SMA
Supplier Device Package:SMA
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$0.37
1,685

Please send RFQ , we will respond immediately.

Similar Products

Part Number B130-13-F B150-13-F   B180-13-F   B160-13-F   B140-13-F   B130L-13-F   B130B-13-F   B170-13-F   B190-13-F   B130Q-13-F   B120-13-F  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Active Active Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky Schottky Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 50 V 80 V 60 V 40 V 30 V 30 V 70 V 90 V 30 V 20 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 500 mV @ 1 A 700 mV @ 1 A 790 mV @ 1 A 700 mV @ 1 A 500 mV @ 1 A 410 mV @ 1 A 500 mV @ 1 A 790 mV @ 1 A 790 mV @ 1 A 500 mV @ 1 A 500 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - - - - - - -
Current - Reverse Leakage @ Vr 500 µA @ 30 V 500 µA @ 50 V 500 µA @ 80 V 500 µA @ 60 V 500 µA @ 40 V 1 mA @ 30 V 500 µA @ 30 V 500 µA @ 70 V 500 µA @ 90 V 500 µA @ 30 V 500 µA @ 20 V
Capacitance @ Vr, F 110pF @ 4V, 1MHz 110pF @ 4V, 1MHz 80pF @ 4V, 1MHz 110pF @ 4V, 1MHz 110pF @ 4V, 1MHz 110pF @ 4V, 1MHz 110pF @ 4V, 1MHz 80pF @ 4V, 1MHz 80pF @ 4V, 1MHz 110pF @ 4V, 1MHz 110pF @ 4V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AA, SMB DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA
Supplier Device Package SMA SMA SMA SMA SMA SMA SMB SMA SMA SMA SMA
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -55°C ~ 125°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

NTE5806
NTE5806
NTE Electronics, Inc
R-600V PRV 3A AXIAL LEAD
CMR1F-02M TR13 PBFREE
CMR1F-02M TR13 PBFREE
Central Semiconductor Corp
DIODE GEN PURP 200V 1A SMA
FES16ATR
FES16ATR
Fairchild Semiconductor
RECTIFIER DIODE
BAQ334-TR
BAQ334-TR
Vishay General Semiconductor - Diodes Division
DIODE GP 60V 200MA MICROMELF
US1JDF-13
US1JDF-13
Diodes Incorporated
DIODE GEN PURPOSE 600V 1A DFLAT
VS-MURB820TRL-M3
VS-MURB820TRL-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A D2PAK
5821SMJ/TR13
5821SMJ/TR13
Microchip Technology
DIODE SCHOTTKY 30V 3A DO214AB
85HF20
85HF20
Solid State Inc.
DO5 85 AMP SILICON RECTFIER KK
G4S06540PT
G4S06540PT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 40A 2-PI
P600A-E3/73
P600A-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 6A P600
1N4006-N-0-3-AP
1N4006-N-0-3-AP
Micro Commercial Co
DIODE GEN PURP 800V 1A DO-41
SF13GHR0G
SF13GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 1A DO204AL

Related Product By Brand

SMAJ18A-13-F
SMAJ18A-13-F
Diodes Incorporated
TVS DIODE 18VWM 29.2VC SMA
SMAJ12A-13-F
SMAJ12A-13-F
Diodes Incorporated
TVS DIODE 12VWM 19.9VC SMA
D1213A-01LP-7B
D1213A-01LP-7B
Diodes Incorporated
TVS DIODE 3.3VWM 10VC DFN1006-2
FL374WFBR2
FL374WFBR2
Diodes Incorporated
CRYSTAL 37.4000MHZ 16PF SMD
BZT52C8V2S-7-F-79
BZT52C8V2S-7-F-79
Diodes Incorporated
DIODE ZENER 8.2V 200MW SOD323
DDTA143FE-7-F
DDTA143FE-7-F
Diodes Incorporated
TRANS PREBIAS PNP 150MW SOT523
DDTC123TE-7-F
DDTC123TE-7-F
Diodes Incorporated
TRANS PREBIAS NPN 150MW SOT523
DMN2011UFDF-7
DMN2011UFDF-7
Diodes Incorporated
MOSFET N-CH 20V 14.2A 6UDFN
PI7C9X2G608ELZXAE
PI7C9X2G608ELZXAE
Diodes Incorporated
IC INTERFACE SPECIALIZED 136AQFN
AP431SHAZTR-G1
AP431SHAZTR-G1
Diodes Incorporated
IC VREF SHUNT ADJ 0.5% TO92
ZR2431G02TA
ZR2431G02TA
Diodes Incorporated
IC VREF SHUNT PREC ADJ SOT-223
AP1115BYG-13
AP1115BYG-13
Diodes Incorporated
IC REG LIN POS ADJ 600MA SOT89-3