Diodes Incorporated-APT13003DI-G1 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	APT13003DI-G1	APT13003DU-G1	APT13005DI-G1
Manufacturer	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Product Status	Obsolete	Obsolete	Obsolete
Transistor Type	NPN	NPN	NPN
Current - Collector (Ic) (Max)	1.5 A	1.5 A	4 A
Voltage - Collector Emitter Breakdown (Max)	450 V	450 V	450 V
Vce Saturation (Max) @ Ib, Ic	400mV @ 250mA, 1A	400mV @ 250mA, 1A	900mV @ 1A, 4A
Current - Collector Cutoff (Max)	-	-	-
DC Current Gain (hFE) (Min) @ Ic, Vce	5 @ 1A, 2V	5 @ 1A, 2V	8 @ 2A, 5V
Power - Max	24 W	20 W	25 W
Frequency - Transition	4MHz	4MHz	4MHz
Operating Temperature	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	TO-225AA, TO-126-3	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package	TO-251	TO-126	TO-251

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1.5 A
Voltage - Collector Emitter Breakdown (Max):	450 V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 250mA, 1A
Current - Collector Cutoff (Max):	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	5 @ 1A, 2V
Power - Max:	24 W
Frequency - Transition:	4MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	TO-251

Diodes Incorporated APT13003DI-G1