Diodes Incorporated-ADTC114YUAQ-13 - Transistors - Bipolar (BJT) - Single, Pre-Biased Product Specifications and Latest Quotes

Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	-
Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	-
Frequency - Transition:	250 MHz
Power - Max:	330 mW
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323

Diodes Incorporated ADTC114YUAQ-13