Diodes Incorporated-2DD2661-13 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	2 A
Voltage - Collector Emitter Breakdown (Max):	12 V
Vce Saturation (Max) @ Ib, Ic:	180mV @ 50mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	270 @ 200mA, 2V
Power - Max:	900 mW
Frequency - Transition:	170MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	SOT-89-3

Diodes Incorporated 2DD2661-13