Diodes Incorporated-2DB1119S-13 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	PNP
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	25 V
Vce Saturation (Max) @ Ib, Ic:	700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	140 @ 50mA, 2V
Power - Max:	1 W
Frequency - Transition:	200MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	SOT-89-3

Diodes Incorporated 2DB1119S-13