1N5817-T
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Diodes Incorporated 1N5817-T

Manufacturer No:
1N5817-T
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
1N5817-T Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 20V 1A DO41
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):20 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:450 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:1 mA @ 20 V
Capacitance @ Vr, F:110pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-41
Operating Temperature - Junction:-65°C ~ 125°C
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Similar Products

Part Number 1N5817-T 1N5817-TP   1N5818-T   1N5819-T   1N5817-B  
Manufacturer Diodes Incorporated Micro Commercial Co Diodes Incorporated Diodes Incorporated Rectron USA
Product Status Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 20 V 20 V 30 V 40 V 20 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 450 mV @ 1 A 450 mV @ 1 A 550 mV @ 1 A 600 mV @ 1 A 450 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 1 mA @ 20 V 1 mA @ 20 V 1 mA @ 30 V 1 mA @ 40 V 200 µA @ 20 V
Capacitance @ Vr, F 110pF @ 4V, 1MHz 110pF @ 4V, 1MHz 110pF @ 4V, 1MHz 110pF @ 4V, 1MHz 110pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-41 DO-41 DO-41 DO-41 DO-41
Operating Temperature - Junction -65°C ~ 125°C -55°C ~ 125°C -65°C ~ 125°C -65°C ~ 125°C 150°C

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