1N5408G-T
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Diodes Incorporated 1N5408G-T

Manufacturer No:
1N5408G-T
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
1N5408G-T Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 1KV 3A DO201AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 3 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:40pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-201AD, Axial
Supplier Device Package:DO-201AD
Operating Temperature - Junction:-65°C ~ 150°C
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Similar Products

Part Number 1N5408G-T 1N5404G-T   1N5406G-T   1N5407G-T   1N5408-T  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Obsolete
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 400 V 600 V 800 V 1000 V
Current - Average Rectified (Io) 3A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 3 A 1.1 V @ 3 A 1.1 V @ 3 A 1.1 V @ 3 A 1 V @ 3 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs 2 µs -
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 400 V 5 µA @ 600 V 5 µA @ 800 V 10 µA @ 1000 V
Capacitance @ Vr, F 40pF @ 4V, 1MHz 40pF @ 4V, 1MHz 40pF @ 4V, 1MHz 40pF @ 4V, 1MHz 25pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial DO-201AD, Axial
Supplier Device Package DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

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