1N4448-T
  • Share:

Diodes Incorporated 1N4448-T

Manufacturer No:
1N4448-T
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
1N4448-T Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 75V 150MA DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):150mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:5 µA @ 75 V
Capacitance @ Vr, F:4pF @ 0V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
561

Please send RFQ , we will respond immediately.

Similar Products

Part Number 1N4448-T 1N4448WT   1N4448-TP   1N4448-A  
Manufacturer Diodes Incorporated onsemi Micro Commercial Co Vishay General Semiconductor - Diodes Division
Product Status Obsolete Active Obsolete Obsolete
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 75 V 75 V 75 V
Current - Average Rectified (Io) 150mA 200mA 150mA 500mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 100 mA 1 V @ 100 mA 1 V @ 100 mA 1 V @ 10 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 4 ns 4 ns 4 ns 4 ns
Current - Reverse Leakage @ Vr 5 µA @ 75 V 5 µA @ 75 V 5 µA @ 75 V 5 µA @ 75 V
Capacitance @ Vr, F 4pF @ 0V, 1MHz 4pF @ 0V, 1MHz - 4pF @ 0V, 1MHz
Mounting Type Through Hole Surface Mount Through Hole Through Hole
Package / Case DO-204AH, DO-35, Axial SC-79, SOD-523F DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial
Supplier Device Package DO-35 SOD-523F DO-35 DO-35 (DO-204AH)
Operating Temperature - Junction -65°C ~ 175°C -55°C ~ 150°C -50°C ~ 150°C -65°C ~ 175°C

Related Product By Categories

STPS8L30DEE-TR
STPS8L30DEE-TR
STMicroelectronics
DIODE SCHOTTKY 30V 8A POWERFLAT
PDR3G-13
PDR3G-13
Diodes Incorporated
DIODE GEN PURP 400V 3A POWERDI5
MBR10U200-TP
MBR10U200-TP
Micro Commercial Co
DIODE SCHOTTKY 200V 10A TO277
SFT14G
SFT14G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A 200V TS-1
NRVBSS34FA
NRVBSS34FA
onsemi
DIODE SCHOTTKY 40V 3A SOD123-2
JANTX1N914/TR
JANTX1N914/TR
Microchip Technology
SIGNAL/COMPUTER DIODE
HFA25PB60
HFA25PB60
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 25A TO247AC
VS-HFA06PB120PBF
VS-HFA06PB120PBF
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 6A TO247AC
UF4004-TP
UF4004-TP
Micro Commercial Co
DIODE GEN PURP 400V 1A DO41
UH3B-M3/57T
UH3B-M3/57T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 2.5A DO214AB
HS1DL MTG
HS1DL MTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
BY229X-800,127
BY229X-800,127
NXP USA Inc.
DIODE GEN PURP 600V 8A TO220F

Related Product By Brand

FL2400155
FL2400155
Diodes Incorporated
CRYSTAL 24.0000MHZ 9PF SMD
FL2500240
FL2500240
Diodes Incorporated
CRYSTAL 25.0000MHZ 18PF SMD
FL2820005
FL2820005
Diodes Incorporated
CRYSTAL 28.2240MHZ 18PF SMD
SDT12A120P5-7D
SDT12A120P5-7D
Diodes Incorporated
DIODE SCHOTTKY 120V 12A POWRDI 5
MMBD4148W-7
MMBD4148W-7
Diodes Incorporated
DIODE GEN PURP 75V 150MA SOT323
DMP32D4S-13
DMP32D4S-13
Diodes Incorporated
MOSFET P-CH 30V 300MA SOT23
PT8A2647WE
PT8A2647WE
Diodes Incorporated
PIR CONTROLLER SO-16
PI4ULS3V08ZFE
PI4ULS3V08ZFE
Diodes Incorporated
IC TRNSLTR BIDIRECTIONAL 36TQFN
PS8A0084PEX
PS8A0084PEX
Diodes Incorporated
HEATER CONTROLLER DIP-8
ZSM560C
ZSM560C
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL TO92-3
ZTL432AFFTA
ZTL432AFFTA
Diodes Incorporated
IC VREF SHUNT ADJ 1% SOT23F
AP1119Y25L-13
AP1119Y25L-13
Diodes Incorporated
IC REG LINEAR 2.5V 500MA SOT89-5