1N4007L-T
  • Share:

Diodes Incorporated 1N4007L-T

Manufacturer No:
1N4007L-T
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
1N4007L-T Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 1KV 1A DO41
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-41
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

-
530

Please send RFQ , we will respond immediately.

Similar Products

Part Number 1N4007L-T 1N4006L-T   1N4007-T   1N4007G-T   1N4007GL-T  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete Not For New Designs Active Obsolete
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 800 V 1000 V 1000 V 1000 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - 2 µs 2 µs
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 800 V 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz 8pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-41 DO-41 DO-41 DO-41 DO-41
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

MBR0560-TP
MBR0560-TP
Micro Commercial Co
DIODE SCHOTTKY 60V 500MA SOD123
1N4002G
1N4002G
onsemi
DIODE GEN PURP 100V 1A DO41
BAS16J/SG115
BAS16J/SG115
NXP USA Inc.
RECTIFIER DIODE, 0.25A, 100V
S8KC
S8KC
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 8A DO214AB
RS3BHE3_A/I
RS3BHE3_A/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 3A DO214AB
JANTX1N4246
JANTX1N4246
Microchip Technology
DIODE GEN PURP 400V 1A AXIAL
MBRH240100R
MBRH240100R
GeneSiC Semiconductor
DIODE SCHOTTKY 100V 240A D67
MMBD914-7
MMBD914-7
Diodes Incorporated
DIODE GEN PURP 75V 200MA SOT23-3
STTH152RL
STTH152RL
STMicroelectronics
DIODE GEN PURP 200V 1.5A DO15
STTH10R04G
STTH10R04G
STMicroelectronics
DIODE GEN PURP 400V 10A D2PAK
VS-8TQ100GSPBF
VS-8TQ100GSPBF
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 8A D2PAK
SF1602GHC0G
SF1602GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 16A TO220AB

Related Product By Brand

GC2700046
GC2700046
Diodes Incorporated
CRYSTAL METAL CAN 49S/SMD T&R 1K
RABF22-13
RABF22-13
Diodes Incorporated
BRIDGE RECTIFIER ABF/SOPA-4(TYPE
SBR20M150D1Q-13
SBR20M150D1Q-13
Diodes Incorporated
SBR DIODE TO252
APD240VRTR-G1
APD240VRTR-G1
Diodes Incorporated
DIODE SCHOTTKY 40V 2A DO214AC
DZ23C51-7
DZ23C51-7
Diodes Incorporated
DIODE ZENER ARRAY 51V SOT23-3
MMBZ5243BS-7
MMBZ5243BS-7
Diodes Incorporated
DIODE ZENER ARRAY 13V SOT363
ZTX1048A
ZTX1048A
Diodes Incorporated
TRANS NPN 17.5V 4A E-LINE
DDTC123JCA-7-F
DDTC123JCA-7-F
Diodes Incorporated
TRANS PREBIAS NPN 200MW SOT23-3
PI6C49CB01Q2WEX
PI6C49CB01Q2WEX
Diodes Incorporated
CLOCK BUFFER SO-8
PI6CXG06F62AFBEIEX
PI6CXG06F62AFBEIEX
Diodes Incorporated
IC CLOCK GENERATOR 48LQFP
PT8A3304NWEX
PT8A3304NWEX
Diodes Incorporated
HEATER CONTROLLER SO-8
AP1506-50T5G-U
AP1506-50T5G-U
Diodes Incorporated
IC REG BUCK 3A TO220-5