10A04-B
  • Share:

Diodes Incorporated 10A04-B

Manufacturer No:
10A04-B
Manufacturer:
Diodes Incorporated
Package:
Bulk
Datasheet:
10A04-B Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 400V 10A R-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):10A
Voltage - Forward (Vf) (Max) @ If:1 V @ 10 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:10 µA @ 400 V
Capacitance @ Vr, F:150pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:R-6, Axial
Supplier Device Package:R-6
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

-
602

Please send RFQ , we will respond immediately.

Similar Products

Part Number 10A04-B 10A04-T  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 400 V
Current - Average Rectified (Io) 10A 10A
Voltage - Forward (Vf) (Max) @ If 1 V @ 10 A 1 V @ 10 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 10 µA @ 400 V 10 µA @ 400 V
Capacitance @ Vr, F 150pF @ 4V, 1MHz 150pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole
Package / Case R-6, Axial R-6, Axial
Supplier Device Package R-6 R-6
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

S1JHE3_A/I
S1JHE3_A/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO214AC
VS-8EWF02S-M3
VS-8EWF02S-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO252AA
SB30100LFYT_T0_00001
SB30100LFYT_T0_00001
Panjit International Inc.
LOW VF SCHOTTKY BARRIER RECTIFIE
BYT51A-TR
BYT51A-TR
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 50V 1.5A SOD57
AS1PGHM3/85A
AS1PGHM3/85A
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 400V 1.5A DO220
S12JC V7G
S12JC V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 12A DO214AB
UGB8FTHE3_A/I
UGB8FTHE3_A/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 300V 8A TO263AB
VS-41HFR120
VS-41HFR120
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 40A DO203AB
VS-T85HFL10S02
VS-T85HFL10S02
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 85A D-55
SS34HE3/57T
SS34HE3/57T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 3A DO214AB
SF21G-AP
SF21G-AP
Micro Commercial Co
DIODE GPP SUPER FAST 2A DO-15
UGA15120
UGA15120
Taiwan Semiconductor Corporation
DIODE GEN PURP 15A TO220AC

Related Product By Brand

FW5000008Q
FW5000008Q
Diodes Incorporated
CRYSTAL 50.0000MHZ 10PF SMD
GC0360021
GC0360021
Diodes Incorporated
CRYSTAL METAL CAN 49S/SMD T&R 1K
FK2600039
FK2600039
Diodes Incorporated
CLOCK SAW OSCILLATOR SEAM3225 T&
FJ1300006
FJ1300006
Diodes Incorporated
XTAL OSC XO 13.0000MHZ CMOS SMD
FKA000010Z
FKA000010Z
Diodes Incorporated
XTAL OSC XO 100.0000MHZ CMOS
JT3525008P
JT3525008P
Diodes Incorporated
TEMP COMP XO SEAM3225
PR1505S-A
PR1505S-A
Diodes Incorporated
DIODE GEN PURP 600V 1.5A DO41
DMP21D0UFB4-7B
DMP21D0UFB4-7B
Diodes Incorporated
MOSFET P-CH 20V 770MA 3DFN
ZXMN3A02N8TA
ZXMN3A02N8TA
Diodes Incorporated
MOSFET N-CH 30V 7.3A 8SO
PI3VDP3212ZLE+DA
PI3VDP3212ZLE+DA
Diodes Incorporated
IC DEMULTIPLEXER 2LANE 32TQFN
ZXLD1371EST16TC
ZXLD1371EST16TC
Diodes Incorporated
IC LED DRIVER CTRLR PWM 16TSSOP
AP2125AN-3.3TRG1
AP2125AN-3.3TRG1
Diodes Incorporated
IC REG LINEAR 3.3V 300MA SOT23