Broadcom Limited-AT-42010 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	8GHz
Noise Figure (dB Typ @ f):	1.9dB ~ 3dB @ 2GHz ~ 4GHz
Gain:	10dB ~ 13.5dB
Power - Max:	600mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 35mA, 8V
Current - Collector (Ic) (Max):	80mA
Operating Temperature:	200°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	4-SMD (100 mil)
Supplier Device Package:	-

Broadcom Limited AT-42010