Broadcom Limited-AT-41435G - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	8GHz
Noise Figure (dB Typ @ f):	1.3dB ~ 3dB @ 1GHz ~ 4GHz
Gain:	10dB ~ 18.5dB
Power - Max:	500mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 10mA, 8V
Current - Collector (Ic) (Max):	60mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	4-SMD (35 micro-X)
Supplier Device Package:	35 micro-X

Broadcom Limited AT-41435G