Bourns Inc.-BIDW50N65T - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	100 A
Current - Collector Pulsed (Icm):	150 A
Vce(on) (Max) @ Vge, Ic:	2.2V @ 15V, 50A
Power - Max:	416 W
Switching Energy:	3mJ (on), 1.1mJ (off)
Input Type:	Standard
Gate Charge:	123 nC
Td (on/off) @ 25°C:	37ns/125ns
Test Condition:	400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr):	37.5 ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247

Bourns Inc. BIDW50N65T