ZXTS1000E6TC vs ZXTS1000E6TA

Product Attributes

Part Number ZXTS1000E6TC ZXTS1000E6TA
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
ZXTS1000E6TC ZXTS1000E6TA
Product Status Obsolete Active
Transistor Type PNP + Diode (Isolated) -
Current - Collector (Ic) (Max) 1.25 A -
Voltage - Collector Emitter Breakdown (Max) 12 V -
Vce Saturation (Max) @ Ib, Ic 240mV @ 100mA, 1.25A -
Current - Collector Cutoff (Max) 10nA -
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 2V -
Power - Max 885 mW -
Frequency - Transition 220MHz -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Package / Case SOT-23-6 -
Supplier Device Package SOT-23-6 -