ZXTP56060FDBQ-7 vs ZXTP56020FDBQ-7

Product Attributes

Part Number ZXTP56060FDBQ-7 ZXTP56020FDBQ-7
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - Bipolar (BJT) - Arrays Transistors - Bipolar (BJT) - Arrays
ZXTP56060FDBQ-7 ZXTP56020FDBQ-7
Product Status Active Active
Transistor Type 2 PNP (Dual) 2 PNP (Dual)
Current - Collector (Ic) (Max) 2A 2A
Voltage - Collector Emitter Breakdown (Max) 60V 20V
Vce Saturation (Max) @ Ib, Ic 450mV @ 200mA, 2A 390mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 170 @ 100mA, 2V 250 @ 100mA, 2V
Power - Max 510mW 405mW
Frequency - Transition - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-UDFN Exposed Pad 6-UDFN Exposed Pad
Supplier Device Package U-DFN2020-6 U-DFN2020-6