ZXTP2012GTA vs ZXTP2014GTA

Product Attributes

Part Number ZXTP2012GTA ZXTP2014GTA
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
ZXTP2012GTA ZXTP2014GTA
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 5.5 A 4 A
Voltage - Collector Emitter Breakdown (Max) 60 V 140 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 500mA, 5A 360mV @ 300mA, 3A
Current - Collector Cutoff (Max) 20nA (ICBO) 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A, 1V 100 @ 1A, 5V
Power - Max 3 W 3 W
Frequency - Transition 120MHz 120MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223-3 SOT-223-3