ZXTP2014GTA vs ZXTP2013GTA

Product Attributes

Part Number ZXTP2014GTA ZXTP2013GTA
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
ZXTP2014GTA ZXTP2013GTA
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 4 A 5 A
Voltage - Collector Emitter Breakdown (Max) 140 V 100 V
Vce Saturation (Max) @ Ib, Ic 360mV @ 300mA, 3A 340mV @ 400mA, 4A
Current - Collector Cutoff (Max) 20nA (ICBO) 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A, 5V 100 @ 1A, 1V
Power - Max 3 W 3 W
Frequency - Transition 120MHz 125MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223-3 SOT-223-3