ZXTP2014ZQTA vs ZXTP2012ZQTA

Product Attributes

Part Number ZXTP2014ZQTA ZXTP2012ZQTA
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
ZXTP2014ZQTA ZXTP2012ZQTA
Product Status Active Active
Transistor Type PNP -
Current - Collector (Ic) (Max) 3 A -
Voltage - Collector Emitter Breakdown (Max) 140 V -
Vce Saturation (Max) @ Ib, Ic 330mV @ 300mA, 3A -
Current - Collector Cutoff (Max) 20nA -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A, 5V -
Power - Max 1.5 W -
Frequency - Transition 120MHz -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Package / Case TO-243AA -
Supplier Device Package SOT-89-3 -