ZTX857STZ vs ZTX855STZ

Product Attributes

Part Number ZTX857STZ ZTX855STZ
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
ZTX857STZ ZTX855STZ
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 3 A 4 A
Voltage - Collector Emitter Breakdown (Max) 300 V 150 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 600mA, 3A 260mV @ 400mA, 4A
Current - Collector Cutoff (Max) 1µA (ICBO) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA, 10V 100 @ 1A, 5V
Power - Max 1.2 W 1.2 W
Frequency - Transition 80MHz 90MHz
Operating Temperature -55°C ~ 200°C (TJ) -55°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case E-Line-3, Formed Leads E-Line-3
Supplier Device Package E-Line (TO-92 compatible) E-Line (TO-92 compatible)