VN2450N3-G vs VP2450N3-G

Product Attributes

Part Number VN2450N3-G VP2450N3-G
Manufacturer Microchip Technology Microchip Technology
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
VN2450N3-G VP2450N3-G
Product Status Active Active
FET Type N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 200mA (Tj) 100mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 13Ohm @ 400mA, 10V 30Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 25 V 190 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1W (Ta) 740mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-92-3 TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 (TO-226AA)