VP2110K1-G vs VN2110K1-G

Product Attributes

Part Number VP2110K1-G VN2110K1-G
Manufacturer Microchip Technology Microchip Technology
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
VP2110K1-G VN2110K1-G
Product Status Active Active
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 120mA (Tj) 200mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 12Ohm @ 500mA, 10V 4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V 50 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 360mW (Ta) 360mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB (SOT23) SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3