UPA811T-T1-A vs UPA812T-T1-A

Product Attributes

Part Number UPA811T-T1-A UPA812T-T1-A
Manufacturer Renesas Electronics America Inc CEL
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
UPA811T-T1-A UPA812T-T1-A
Product Status Obsolete Obsolete
Transistor Type 2 NPN (Dual) 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max) 10V 10V
Frequency - Transition 8GHz 7GHz
Noise Figure (dB Typ @ f) 1.9dB @ 2GHz 1.4dB @ 1GHz
Gain 7.5dB 12dB
Power - Max 200mW 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 3V 70 @ 7mA, 3V
Current - Collector (Ic) (Max) 35mA 65mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363 SOT-363