UPA802T-T1-A vs UPA806T-T1-A

Product Attributes

Part Number UPA802T-T1-A UPA806T-T1-A
Manufacturer Renesas Electronics America Inc Renesas
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
UPA802T-T1-A UPA806T-T1-A
Product Status Obsolete Last Time Buy
Transistor Type 2 NPN (Dual) 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max) 10V 6V
Frequency - Transition 7GHz 12GHz
Noise Figure (dB Typ @ f) 1.4dB @ 1GHz 1.5dB @ 2GHz
Gain 12dB 8.5dB
Power - Max 200mW 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 7mA, 3V 75 @ 10mA, 3V
Current - Collector (Ic) (Max) 65mA 30mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363 6-SuperMiniMold