| Part Number | UPA2816T1S-E2-AT | UPA2814T1S-E2-AT |
|---|---|---|
| Manufacturer | Renesas Electronics America Inc | Renesas Electronics America Inc |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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| Product Status | Active | Active |
| FET Type | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) | 24A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 15.5mOhm @ 17A, 10V | 7.8mOhm @ 24A, 5V |
| Vgs(th) (Max) @ Id | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 33.4 nC @ 10 V | 74 nC @ 10 V |
| Vgs (Max) | +20V, -25V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1160 pF @ 10 V | 2800 pF @ 10 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 1.5W (Ta) | 1.5W (Ta) |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | 8-HWSON (3.3x3.3) | 8-HWSON (3.3x3.3) |
| Package / Case | 8-PowerWDFN | 8-PowerWDFN |