| Part Number | UPA2810T1L-E2-AY | UPA2810T1L-E1-AY |
|---|---|---|
| Manufacturer | Renesas Electronics America Inc | Renesas Electronics America Inc |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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| Product Status | Obsolete | Obsolete |
| FET Type | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) | 13A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | - | - |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 13A, 10V | 12mOhm @ 13A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V | 40 nC @ 10 V |
| Vgs (Max) | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1860 pF @ 10 V | 1860 pF @ 10 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 1.5W (Ta) | 1.5W (Ta) |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | 8-DFN3333 (3.3x3.3) | 8-DFN3333 (3.3x3.3) |
| Package / Case | 8-VDFN Exposed Pad | 8-VDFN Exposed Pad |