UNR411100A vs UNR412100A

Product Attributes

Part Number UNR411100A UNR412100A
Manufacturer Panasonic Electronic Components Panasonic Electronic Components
Category Transistors - Bipolar (BJT) - Single, Pre-Biased Transistors - Bipolar (BJT) - Single, Pre-Biased
UNR411100A UNR412100A
Product Status Obsolete Obsolete
Transistor Type PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Resistor - Base (R1) 10 kOhms 2.2 kOhms
Resistor - Emitter Base (R2) 10 kOhms 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V 40 @ 100mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 500nA 1µA
Frequency - Transition 80 MHz 200 MHz
Power - Max 300 mW 300 mW
Mounting Type Through Hole Through Hole
Package / Case 3-SIP 3-SSIP
Supplier Device Package NS-B1 NS-A1