UMG4N-7 vs UMC4N-7

Product Attributes

Part Number UMG4N-7 UMC4N-7
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased Transistors - Bipolar (BJT) - Arrays, Pre-Biased
UMG4N-7 UMC4N-7
Product Status Active Active
Transistor Type 2 NPN - Pre-Biased (Dual) 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 50V 50V
Resistor - Base (R1) 10kOhms 47kOhms, 10kOhms
Resistor - Emitter Base (R2) - 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA 300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) - 500nA
Frequency - Transition 250MHz 250MHz
Power - Max 150mW 150mW
Mounting Type Surface Mount Surface Mount
Package / Case 5-TSSOP, SC-70-5, SOT-353 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package SOT-353 SOT-353