TPS1120DR vs TPS1120D

Product Attributes

Part Number TPS1120DR TPS1120D
Manufacturer Texas Instruments Texas Instruments
Category Transistors - FETs, MOSFETs - Arrays Transistors - FETs, MOSFETs - Arrays
TPS1120DR TPS1120D
Product Status Active Active
FET Type 2 P-Channel (Dual) 2 P-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 15V 15V
Current - Continuous Drain (Id) @ 25°C 1.17A 1.17A
Rds On (Max) @ Id, Vgs 180mOhm @ 1.5A, 10V 180mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.45nC @ 10V 5.45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds - -
Power - Max 840mW 840mW
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC