TPS1101D vs TPS1101DR

Product Attributes

Part Number TPS1101D TPS1101DR
Manufacturer Texas Instruments Texas Instruments
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
TPS1101D TPS1101DR
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 15 V 15 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta) 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 10V 2.7V, 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 2.5A, 10V 90mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.25 nC @ 10 V 11.25 nC @ 10 V
Vgs (Max) +2V, -15V +2V, -15V
Input Capacitance (Ciss) (Max) @ Vds - -
FET Feature - -
Power Dissipation (Max) 791mW (Ta) 791mW (Ta)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)