TP5335K1-G vs TN5335K1-G

Product Attributes

Part Number TP5335K1-G TN5335K1-G
Manufacturer Microchip Technology Microchip Technology
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
TP5335K1-G TN5335K1-G
Product Status Active Active
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 350 V 350 V
Current - Continuous Drain (Id) @ 25°C 85mA (Tj) 110mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 3V, 10V
Rds On (Max) @ Id, Vgs 30Ohm @ 200mA, 10V 15Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 110 pF @ 25 V 110 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 360mW (Ta) 360mW (Ta)
Operating Temperature -55°C ~ 150°C -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB (SOT23) SOT-23 (TO-236AB)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3